GCMS080B120S1-E1
Part NoGCMS080B120S1-E1
ManufacturerSemiQ
DescriptionSIC 1200V 80M MOSFET & 10A SBD S
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs58 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1374 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature142W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18239
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 25.4822 | |
| 10 | 24.9726 | |
| 100 | 24.2081 | |
| 1000 | 23.4436 | |
| 10000 | 22.4243 |
Associated Product
