GCMX010A120B3B1P
Part NoGCMX010A120B3B1P
ManufacturerSemiQ
DescriptionSIC 1200V 10M MOSFET HALF-BRIDGE
Datasheet
Download Now!
ECAD Module
Specification
PackageTray
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C173A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 800V
Power - Max577W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-
Grade-
Qualification-
In Stock:
10
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 105.11 | |
| 10 | 103.008 | |
| 100 | 99.85 | |
| 1000 | 96.7 | |
| 10000 | 92.5 |
Associated Product
