GCMX020A120B3H1P
Part NoGCMX020A120B3H1P
ManufacturerSemiQ
DescriptionSIC 1200V 20M MOSFET FULL-BRIDGE
Datasheet
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ECAD Module
Specification
PackageTray
Series-
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel (Full Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C93A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds6700pF @ 800V
Power - Max300W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-
Grade-
Qualification-
In Stock:
10
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 105.11 | |
| 10 | 103.008 | |
| 100 | 99.85 | |
| 1000 | 96.7 | |
| 10000 | 92.5 |
Associated Product
