GCMX020B120S1-E1
Part NoGCMX020B120S1-E1
ManufacturerSemiQ
DescriptionSIC 1200V 20M MOSFET SOT-227
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs216 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds5349 pF @ 1000 V
FET Feature-
Power Dissipation (Max)395W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC
Grade-
Qualification-
In Stock:
26
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 40.91 | |
| 10 | 40.092 | |
| 100 | 38.86 | |
| 1000 | 37.64 | |
| 10000 | 36.0 |
Associated Product
