GP2T080A120H
Part NoGP2T080A120H
ManufacturerSemiQ
DescriptionSIC MOSFET 1200V 80M TO-247-4L
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs61 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1377 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature188W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17870
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.6427 | |
| 10 | 8.4698 | |
| 100 | 8.2106 | |
| 1000 | 7.9513 | |
| 10000 | 7.6056 |
Associated Product
