Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)200mW
Collector Current (Ic)500mA
DC Current Gain (hFE@Ic,Vce)160@50mA,1V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@500mA,50mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
9657
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.006 | |
| 10 | 0.006 | |
| 100 | 0.01 | |
| 1000 | 0.01 | |
| 10000 | 0.01 |
Associated Product
