S2M0025120J
Part NoS2M0025120J
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C70A (Tj)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs177 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 1000 V
FET Feature-
Power Dissipation (Max)311W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade-
Qualification-
In Stock:
50
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 22.66 | |
| 10 | 22.207 | |
| 100 | 21.53 | |
| 1000 | 20.85 | |
| 10000 | 19.94 |
Associated Product
