S2M0040120J-1
Part NoS2M0040120J-1
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C55A (Tj)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs92.1 nC @ 20 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1904 pF @ 1000 V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade-
Qualification-
In Stock:
2229
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.81 | |
| 10 | 14.514 | |
| 100 | 14.07 | |
| 1000 | 13.63 | |
| 10000 | 13.03 |
Associated Product
