S2M0040120K-1
Part NoS2M0040120K-1
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C55A (Tj)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs92.1 nC @ 20 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1904 pF @ 1000 V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
In Stock:
2038
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.98 | |
| 10 | 13.7 | |
| 100 | 13.28 | |
| 1000 | 12.86 | |
| 10000 | 12.3 |
Associated Product
