S2M0080120J
Part NoS2M0080120J
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C37A (Tj)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs54 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)1324 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature234W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7301
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.0192 | |
| 10 | 9.8188 | |
| 100 | 9.5182 | |
| 1000 | 9.2177 | |
| 10000 | 8.8169 |
Associated Product
