S2M0120120J
Part NoS2M0120120J
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)150mOhm @ 13.3A, 20V
RdsOn(Max)@Id4V @ 3.3mA
Vgs29.6 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)652 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature153W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16137
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.614 | |
| 10 | 7.4617 | |
| 100 | 7.2333 | |
| 1000 | 7.0049 | |
| 10000 | 6.7003 |
Associated Product
