S2M0160120D
Part NoS2M0160120D
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C17A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)196mOhm @ 10A, 20V
RdsOn(Max)@Id4V @ 2.5mA
Vgs26.5 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)513 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature130W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AD
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15170
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.3308 | |
| 10 | 6.2042 | |
| 100 | 6.0143 | |
| 1000 | 5.8243 | |
| 10000 | 5.5711 |
Associated Product
