Specification
Collector-Emitter Breakdown Voltage (Vceo)80V
Power Dissipation (Pd)1.5W
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)100@150mA,2V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@500mA,50mA
Transistor TypeNPN
Operating Temperature-
In Stock:
25945
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4746 | |
| 10 | 0.4651 | |
| 100 | 0.4509 | |
| 1000 | 0.4366 | |
| 10000 | 0.4176 |
Associated Product
