GT10J303
Part NoGT10J303
ManufacturerTOSHIBA
DescriptionTrans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220NIS
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountThrough Hole
Rise Time120 ns
REACH SVHCUnknown
Number of Pins3
Power Dissipation30 W
Radiation HardeningNo
Element ConfigurationSingle
Max Collector Current10 A
Max Power Dissipation30 W
Max Operating Temperature150 °C
Collector Emitter Voltage (VCEO)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.7 V
In Stock:
8232
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.46 | |
| 10 | 1.4308 | |
| 100 | 1.387 | |
| 1000 | 1.3432 | |
| 10000 | 1.2848 |
Associated Product
