HN1A01F
RoHS

HN1A01F

Part NoHN1A01F
ManufacturerTOSHIBA
Description-
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ECAD Module HN1A01F
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Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)100mW
Collector Current (Ic)150mA
DC Current Gain (hFE@Ic,Vce)120@2mA,6V
Transition Frequency (fT)80MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)100mV@100mA,10mA
Transistor Type2u4e2aPNP
Operating Temperature+150u2103@(Tj)
In Stock: 7702
Pricing
QTY UNIT PRICE EXT PRICE
1 0.033
10 0.033
100 0.03
1000 0.03
10000 0.03
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product