60N03P
RoHS

60N03P

Part No60N03P
ManufacturerTaiwan Semiconductor
Description-
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ECAD Module 60N03P
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Specification
MfrTaiwan Semiconductor Corporation
Series-
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25u00b0C62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs25.4 nC @ 10 V
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds1342 pF @ 15 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (3x3)
Package / Case8-PowerWDFN
Base Product NumberTSM060
In Stock: 7552
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3
10 0.294
100 0.28
1000 0.28
10000 0.26
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product