F1T6GHA1G
Part NoF1T6GHA1G
ManufacturerTaiwan Semiconductor
DescriptionDIODE GEN PURP 800V 1A TS-1
Datasheet
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Specification
PackageTape & Box (TB)
Series-
ProductStatusActive
TechnologyStandard
Voltage-DCReverse(Vr)(Max)800 V
Current-AverageRectified(Io)1A
Voltage-Forward(Vf)(Max)@If1.3 V @ 1 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)5 µA @ 800 V
Current-ReverseLeakage@Vr15pF @ 4V, 1MHz
Capacitance@VrAutomotive
FAEC-Q101
MountingTypeThrough Hole
Package/CaseT-18, Axial
SupplierDevicePackageTS-1
OperatingTemperature-Junction-55°C ~ 150°C
Grade500 ns
Qualification
In Stock:
4989
Pricing
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