TSM2NB65CH X0G
Part NoTSM2NB65CH X0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 650V 2A TO251
Datasheet
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5Ohm @ 1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)390 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature65W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22499
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