TSM4N60ECH C5G
Part NoTSM4N60ECH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 4A TO251
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 2A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)545 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature86.2W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
22319
Pricing
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Associated Product
