TSM4NB60CI
Part NoTSM4NB60CI
ManufacturerTaiwan Semiconductor
Description600V, 4A, SINGLE N-CHANNEL POWER
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs14.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeITO-220
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6561
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.13 | |
| 10 | 1.1074 | |
| 100 | 1.0735 | |
| 1000 | 1.0396 | |
| 10000 | 0.9944 |
Associated Product
