TSM4NB65CI C0G
Part NoTSM4NB65CI C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 650V 4A ITO220AB
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.37Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs13.46 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)549 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature70W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseITO-220AB
GateCharge(Qg)(Max)@VgsTO-220-3 Full Pack, Isolated Tab
Grade
Qualification
In Stock:
11598
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.552 | |
| 10 | 0.541 | |
| 100 | 0.5244 | |
| 1000 | 0.5078 | |
| 10000 | 0.4858 |
Associated Product
