TSM60N1R4CH C5G
Part NoTSM60N1R4CH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 600V 3.3A TO251
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C3.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs7.7 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)370 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature38W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20158
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7524 | |
| 10 | 0.7374 | |
| 100 | 0.7148 | |
| 1000 | 0.6922 | |
| 10000 | 0.6621 |
Associated Product
