TSM60NB041PW C1G
Part NoTSM60NB041PW C1G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 78A TO247
Datasheet
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Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C78A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)41mOhm @ 21.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs139 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)6120 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature446W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
6411
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 12.9369 | |
10 | 12.6782 | |
100 | 12.2901 | |
1000 | 11.9019 | |
10000 | 11.3845 |