TSM60NB190CI
Part NoTSM60NB190CI
ManufacturerTaiwan Semiconductor
Description600V, 18A, SINGLE N-CHANNEL POWE
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs31 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1273 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature33.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeITO-220
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4799
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.8024 | |
| 10 | 4.7064 | |
| 100 | 4.5623 | |
| 1000 | 4.4182 | |
| 10000 | 4.2261 |
Associated Product
