TSM60NB190CM2 RNG
Part NoTSM60NB190CM2 RNG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 600V 18A TO263
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs31 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1273 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13846
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 4.9184 | |
10 | 4.82 | |
100 | 4.6725 | |
1000 | 4.5249 | |
10000 | 4.3282 |