TSM60NB1R4CH C5G
Part NoTSM60NB1R4CH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 3A TO251
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 900mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs7.12 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)257.3 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature28.4W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23295
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.143 | |
| 10 | 1.1201 | |
| 100 | 1.0858 | |
| 1000 | 1.0516 | |
| 10000 | 1.0058 |
Associated Product
