TSM60NE084CIT C0G
Part NoTSM60NE084CIT C0G
ManufacturerTaiwan Semiconductor Corporation
Description600V, 21A, SINGLE N-CHANNEL HIGH
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Rds On (Max) @ Id, Vgs82mOhm @ 7A, 12V
Vgs(th) (Max) @ Id6V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2930 pF @ 300 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageITO-220TL
Package / CaseTO-220-3 Full Pack
In Stock:
2000
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.22 | |
| 10 | 8.056 | |
| 100 | 7.81 | |
| 1000 | 7.56 | |
| 10000 | 7.23 |
Associated Product
