TSM60NE084PW C0G
Part NoTSM60NE084PW C0G
ManufacturerTaiwan Semiconductor Corporation
Description600V, 42A, SINGLE N-CHANNEL HIGH
Datasheet
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Rds On (Max) @ Id, Vgs80mOhm @ 14A, 12V
Vgs(th) (Max) @ Id6V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2939 pF @ 300 V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
In Stock:
300
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 8.97 | |
10 | 8.791 | |
100 | 8.52 | |
1000 | 8.25 | |
10000 | 7.89 |