TSM650P02CX
Part NoTSM650P02CX
ManufacturerTaiwan Semiconductor
Description-20V, -4.1A, SINGLE P-CHANNEL PO
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C4.1A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)65mOhm @ 3A, 4.5V
RdsOn(Max)@Id0.8V @ 250µA
Vgs6.4 nC @ 4.5 V
Vgs(th)(Max)@Id±10V
Vgs(Max)515 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.56W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4270
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.2507 | |
10 | 0.2457 | |
100 | 0.2382 | |
1000 | 0.2306 | |
10000 | 0.2206 |