TSM80N950CH
Part NoTSM80N950CH
ManufacturerTaiwan Semiconductor
Description800V, 6A, SINGLE N-CHANNEL POWER
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)950mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19.6 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)691 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251 (IPAK)
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2790
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.7392 | |
| 10 | 2.6844 | |
| 100 | 2.6022 | |
| 1000 | 2.5201 | |
| 10000 | 2.4105 |
Associated Product
