TSM9ND50CI
Part NoTSM9ND50CI
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 500V 9A ITO220
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)900mOhm @ 2.3A, 10V
RdsOn(Max)@Id3.8V @ 250µA
Vgs24.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1116 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseITO-220
GateCharge(Qg)(Max)@VgsTO-220-3 Full Pack, Isolated Tab
Grade
Qualification
In Stock:
4310
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9484 | |
| 10 | 2.8894 | |
| 100 | 2.801 | |
| 1000 | 2.7125 | |
| 10000 | 2.5946 |
Associated Product
