UGF2008GH
RoHS

UGF2008GH

Part NoUGF2008GH
ManufacturerTaiwan Semiconductor
DescriptionDIODE ARRAY GP 600V 20A ITO220AB
Datasheet Download Now!
ECAD Module UGF2008GH
Get Quotation Now!
Specification
PackageTube
Series-
ProductStatusActive
DiodeConfiguration1 Pair Common Cathode
TechnologyStandard
Voltage-DCReverse(Vr)(Max)600 V
Current-AverageRectified(Io)(perDiode)20A
Voltage-Forward(Vf)(Max)@If1.7 V @ 10 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)25 ns
Current-ReverseLeakage@Vr5 µA @ 600 V
OperatingTemperature-Junction-55°C ~ 150°C
MountingTypeAutomotive
Package/CaseAEC-Q101
SupplierDevicePackageThrough Hole
GradeTO-220-3 Full Pack, Isolated Tab
QualificationITO-220AB
In Stock: 4753
Pricing
QTY UNIT PRICE EXT PRICE
1 0.9324
10 0.9138
100 0.8858
1000 0.8578
10000 0.8205
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
ESH1BH
ESH1BH
Taiwan Semiconductor
15NS, 1A, 100V, ULTRA FAST RECOV
JANTXV1N7039CCT1
JANTXV1N7039CCT1
Microchip
DIODE ARR SCHOT 150V 35A TO254AA
UF4006-AP
UF4006-AP
Micro Commercial
DIODE GEN PURP 800V 1A DO41
SIDC14D60C8X1SA2
SIDC14D60C8X1SA2
Infineon
DIODE GEN PURP 600V 50A DIE
NRVTSM260EV2T3G
NRVTSM260EV2T3G
onsemi
DIODE SCHOTTKY 60V 2A POWERMITE
SK10100D1
SK10100D1
Diotec Semiconductor
DIODE SCHOTTKY 100V 10A TO252
PMEG2015EPK,315
PMEG2015EPK,315
NXP Semiconductors
DIODE SCHOTT 20V 1.5A DFN1608D-2