Specification
RoHSCompliant
MountThrough Hole
Width8.96 mm
Height5.72 mm
Length8.96 mm
Lead FreeContains Lead
Slew Rate0.5 V/µs
Thickness4.4 mm
Schedule B8542330000, 8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|8542330000|85
Case/PackageTO-100
Voltage Gain106.02 dB
Number of Pins10
Output Current25 mA
Contact PlatingLead, Tin
Lifecycle StatusProduction (Last Updated: 5 days ago)
Power Dissipation800 mW
Input Bias Current500 nA
Max Supply Voltage44 V
Min Supply Voltage10 V
Number of Channels2
Number of Elements2
Radiation HardeningNo
Max Power Dissipation800 mW
Max Dual Supply Voltage22 V
Max Operating Temperature125 °C
Min Operating Temperature-55 °C
Input Offset Voltage (Vos)5 mV
Common Mode Rejection Ratio70 dB
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
In Stock:
22436
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 13.4 | |
10 | 13.132 | |
100 | 12.73 | |
1000 | 12.328 | |
10000 | 11.792 |
Associated Product
ISPLSI5512VE-80LF388I
Lattice Semiconductor
EE PLD, 12ns, 512-Cell, CMOS, PBGA388, THERMALLY ENHANCED, FBGA-388
Lattice Semiconductor
EE PLD, 12ns, 512-Cell, CMOS, PBGA388, THERMALLY ENHANCED, FBGA-388