2SK1119(F)
Part No2SK1119(F)
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 1000V 4A TO220AB
Datasheet
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ECAD Module
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C4A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.8Ohm @ 2A, 10V
RdsOn(Max)@Id3.5V @ 1mA
Vgs60 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7897
Pricing
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Associated Product
