TK042N65Z5,S1F(S
Part NoTK042N65Z5,S1F(S
ManufacturerToshiba Semiconductor and Storage
Description650V DTMOS6 HSD 42MOHM TO-247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSVI
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6280 pF @ 300 V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature150°C
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
In Stock:
182
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.96 | |
| 10 | 10.741 | |
| 100 | 10.41 | |
| 1000 | 10.08 | |
| 10000 | 9.64 |
Associated Product
