TK10A80E,S4X
Part NoTK10A80E,S4X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 800V 10A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
Seriesπ-MOSVIII
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C10A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1Ohm @ 5A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs46 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature50W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6360
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.9256 | |
| 10 | 1.8871 | |
| 100 | 1.8293 | |
| 1000 | 1.7716 | |
| 10000 | 1.6945 |
Associated Product
