TK10E60W,S1VX
Part NoTK10E60W,S1VX
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 600V 9.7A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9.7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 4.9A, 10V
RdsOn(Max)@Id3.7V @ 500µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)700 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature100W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4519
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9988 | |
| 10 | 2.9388 | |
| 100 | 2.8489 | |
| 1000 | 2.7589 | |
| 10000 | 2.6389 |
Associated Product
