TK10Q60W,S1VQ
Part NoTK10Q60W,S1VQ
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 600V 9.7A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9.7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)430mOhm @ 4.9A, 10V
RdsOn(Max)@Id3.7V @ 500µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)700 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature80W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-Pak
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3131
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8616 | |
| 10 | 2.8044 | |
| 100 | 2.7185 | |
| 1000 | 2.6327 | |
| 10000 | 2.5182 |
Associated Product
