TK110Z65Z,S1F
Part NoTK110Z65Z,S1F
ManufacturerToshiba Semiconductor and Storage
DescriptionPOWER MOSFET TRANSISTOR TO-247-4
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSVI
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 300 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L(T)
Package / CaseTO-247-4
Grade-
Qualification-
In Stock:
32
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.91 | |
| 10 | 5.792 | |
| 100 | 5.61 | |
| 1000 | 5.44 | |
| 10000 | 5.2 |
Associated Product
