TK12A80W,S4X
Part NoTK12A80W,S4X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 800V 11.5A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C11.5A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)450mOhm @ 5.8A, 10V
RdsOn(Max)@Id4V @ 570µA
Vgs23 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1400 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature45W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4070
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.48 | |
| 10 | 3.4104 | |
| 100 | 3.306 | |
| 1000 | 3.2016 | |
| 10000 | 3.0624 |
Associated Product
