TK16J60W,S1VQ
Part NoTK16J60W,S1VQ
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 600V 15.8A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C15.8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)190mOhm @ 7.9A, 10V
RdsOn(Max)@Id3.7V @ 790µA
Vgs±30V
Vgs(th)(Max)@Id-
Vgs(Max)130W (Tc)
InputCapacitance(Ciss)(Max)@Vds150°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-3P(N)
OperatingTemperatureTO-3P-3, SC-65-3
MountingType38 nC @ 10 V
SupplierDevicePackage1350 pF @ 300 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4689
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Associated Product
