TK17E65W,S1X
Part NoTK17E65W,S1X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 650V 17.3A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C17.3A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)200mOhm @ 8.7A, 10V
RdsOn(Max)@Id3.5V @ 900µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1800 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4536
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5535 | |
| 10 | 3.4824 | |
| 100 | 3.3758 | |
| 1000 | 3.2692 | |
| 10000 | 3.1271 |
Associated Product
