TK20J60W,S1VE
Part NoTK20J60W,S1VE
ManufacturerTOSHIBA
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C20A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)155mOhm @ 10A, 10V
RdsOn(Max)@Id3.7V @ 1mA
Vgs48 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1680 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-3P(N)
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4376
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.8195 | |
| 10 | 5.7031 | |
| 100 | 5.5285 | |
| 1000 | 5.3539 | |
| 10000 | 5.1212 |
Associated Product
