TK49N65W,S1F
Part NoTK49N65W,S1F
ManufacturerTOSHIBA
DescriptionPB-F POWER MOSFET TRANSISTOR TO2
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C49.2A (Ta)
DriveVoltage(MaxRdsOn55mOhm @ 24.6A, 10V
MinRdsOn)3.5V @ 2.5mA
RdsOn(Max)@Id160 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id6500 pF @ 300 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds400W (Tc)
FETFeature150°C
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247
MountingTypeTO-247-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2816
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.3003 | |
| 10 | 9.1143 | |
| 100 | 8.8353 | |
| 1000 | 8.5563 | |
| 10000 | 8.1843 |
Associated Product
