TK4A80E,S4X
Part NoTK4A80E,S4X
ManufacturerToshiba Semiconductor and Storage
DescriptionPB-FPOWERMOSFETTRANSISTORTO-220S
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C4A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.5Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 400µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)650 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3548
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9794 | |
| 10 | 0.9598 | |
| 100 | 0.9304 | |
| 1000 | 0.901 | |
| 10000 | 0.8619 |
Associated Product
