TK65A10N1,S4X
Part NoTK65A10N1,S4X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 100V 65A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C65A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.8mOhm @ 32.5A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs81 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5400 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature45W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3978
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8514 | |
| 10 | 2.7944 | |
| 100 | 2.7088 | |
| 1000 | 2.6233 | |
| 10000 | 2.5092 |
Associated Product
