TK7A90E,S4X
Part NoTK7A90E,S4X
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 900V 7A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
Seriesπ-MOSVIII
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2Ohm @ 3.5A, 10V
RdsOn(Max)@Id4V @ 700µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature45W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2778
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4833 | |
| 10 | 1.4536 | |
| 100 | 1.4091 | |
| 1000 | 1.3646 | |
| 10000 | 1.3053 |
Associated Product
