TK7E80W,S1X
Part NoTK7E80W,S1X
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 800V 6.5A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C6.5A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)950mOhm @ 3.3A, 10V
RdsOn(Max)@Id4V @ 280µA
Vgs13 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)700 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3613
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2332 | |
| 10 | 3.1685 | |
| 100 | 3.0715 | |
| 1000 | 2.9745 | |
| 10000 | 2.8452 |
Associated Product
