TK8A65D(STA4,Q,M)
Part NoTK8A65D(STA4,Q,M)
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 650V 8A TO220SIS
Datasheet
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Specification
PackageBulk
Seriesπ-MOSVII
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)840mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature45W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2910
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.1252 | |
10 | 2.0827 | |
100 | 2.0189 | |
1000 | 1.9552 | |
10000 | 1.8702 |