TK8Q60W,S1VQ
Part NoTK8Q60W,S1VQ
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 600V 8A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C8A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)500mOhm @ 4A, 10V
RdsOn(Max)@Id3.7V @ 400µA
Vgs18.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)570 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature80W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-Pak
SupplierDevicePackageTO-251-3 Stub Leads, IPak
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3780
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3422 | |
| 10 | 2.2954 | |
| 100 | 2.2251 | |
| 1000 | 2.1548 | |
| 10000 | 2.0611 |
Associated Product
